1998. 8. 21
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTD1863
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
FEATURES
High Breakdown Voltage and High Current
: V
CEO
=80V, I
C
=1A.
Low V
CE(sat)
Complementary to KTB1241.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A
B
D
E
G
H
K
L
1. EMITTER
2. COLLECTOR
3. BASE
P
TO-92L
7.20 MAX
5.20 MAX
2.50 MAX
0.60 MAX
1.27
1.70 MAX
0.55 MAX
14.00 0.50
0.35 MIN
0.75 0.10
4
F
J
M
O
Q
25
1.25
1.50
0.10 MAX
DEPTH:0.2
1
2
3
B
A
C
Q
K
F
F
M
M
N
N
O
H
L
J
D
C
N
G
P
H
H
E
D
H
R
S
12.50 0.50
R
1.00
S
1.15 MAX
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification O:70 140, Y:120 240, GR:200 400
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
100
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter Base Voltage
V
EBO
5
V
Collector Current
I
C
1
A
Emitter Current
I
E
-1
A
Collector Power Dissipation
P
C
1
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=80V, I
E
=0
-
-
1
A
Emitter-Cut-off Current
I
EBO
V
EB
=4V, I
C
=0
-
-
1
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=1mA, I
B
=0
80
-
-
V
DC Current Gain
h
FE
(Note)
V
CE
=3V, I
C
=500mA
70
-
400
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=500mA, I
B
=20mA
-
-
0.4
V
Transition Frequency
f
T
V
CE
=10V, I
C
=50mA, f=100MHz
-
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
20
-
pF
1998. 8. 21
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KTD1863
Revision No : 1
C
0.1
0
BASE-EMITTER VOLTAGE V (V)
I - V
C
COLLECTOR CURRENT I (mA)
1
10
100
1000
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BE
BE
Ta=25 C
V =5V
CE
COLLECTOR-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
0
C
CE
CE
C
I - V
0.2
0.4
0.6
0.8
1.0
DC CURRENT GAIN h
COLLECTOR CURRENT I (mA)
0
C
h - I
FE
100
1000
FE
C
V =3V
CE
V =1V
CE
COLLECTOR SATURATION
CE(sat)
0.01
COLLECTOR CURRENT I (mA)
C
C
CE(sat)
V - I
VOLTAGE V (V)
0.02
0.05
0.1
0.2
0.5
1.0
2.0
I /I =20/1
C B
I /I =10/1
B
C
Ta=25 C
TRANSITION FREQUENCY f (MHz)
T
1
EMITTER CURRENT I (mA)
C
f - I
T
E
1
2
5
10
20
50
100
200
500
1000
2
5
10
20
50 100 200 500 1000
Ta=25 C
V =-5V
CE
COLLECTOR OUTPUT CAPACITANCE C (pF)
0.1
1
10
0.2
ob
100
1000
COLLECTOR-BASE VOLTAGE V (V)
10
0.5
1
5
2
CB
20
50 100
C - V
ob
CB
Ta=25 C
f=1MHz
I =0A
E
COLLECTOR CURRENT I (A)
C
1m
10
0.1
COLLECTOR-EMITTER VOLTAGE V (V)
CE
SAFE OPERATION AREA
0.2
1
2
20
100
2m
5m
10m
20m
50m
100m
200m
500m
I Max. (Pulse)
C
0.5
5
50
1
2
5
10
Pw=10
ms
Pw=1
00m
s
Ta=25 C
*Single nonrepetitive pulse
1.8 2.0
0
2
4
6
8
10
0
10
100
1000
Ta=25 C
6mA
5mA
4mA
3mA
2mA
1mA
I =0mA
B
Ta=25 C
0
10
100
1000
I =0A
C
DC
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